Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling

ABSTRACT

Compounds and method of preparation of Si—X and Ge—X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(O) on carbon, Pd(O) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si—containing films.

This application is a divisional application of U.S. patent applicationSer. No. 15/890,538, filed Feb. 7, 2018, which is a continuation of U.S.patent application Ser. No. 15/245,559 filed Aug. 24, 2016, issued asU.S. Pat. No. 9,920,078 on Mar. 20, 2018, which is a divisional of U.S.patent application Ser. No. 15/088,495 filed Apr. 1, 2016, issued asU.S. Pat. No. 9,453,035 on Sep. 27, 2016, which is a divisional of U.S.patent application Ser. No. 14/491,581 filed Sep. 19, 2014, issued asU.S. Pat. No. 9,382,269 on Jul. 5, 2016, which claims benefit of U.S.Provisional Patent Application No. 61/883,452 filed on Sep. 27, 2013.The entire disclosures of these applications are relied upon for allpurposes and are hereby incorporated by reference in their entireties.

BACKGROUND OF THE INVENTION

Most of processes found in the literature to form silicon-heteroatom andgermanium heteroatom bonds involve the reaction of a chlorosilane and anucleophile (amine, phosphine, etc.). These reactions are based on a netdehydrohalogenation thus forming one equivalent of a hydrogen halidewhich needs to be scavenged by a base, forming large amounts of saltwhich need to be filtered out. This fact also limits the scope of thereaction to base-compatible substrates and results in productscontaminated with a halogens such as chlorine and aminohalogens.

Silane compounds such as monosilane, disilane and trisilane are used ina variety of applications. In the field of semiconductors, silanecompounds are frequently used as starting materials (precursors) for theproduction by chemical vapor deposition (CVD) of silicon-baseddielectric films of, e.g., silicon nitride, silicon oxide, or siliconoxynitride. More specifically, silane compounds can produce siliconnitride by reaction with a nitrogen-containing reaction gas such asammonia, silicon oxide by reaction with an oxygen-containing gas such asoxygen, and silicon oxynitride by reaction with a nitrogen-containinggas and an oxygen-containing gas.

At present the standard method for producing silicon nitride films byCVD involves inducing a reaction between ammonia gas or other amine (theamino compound) and a halosilane such as chlorosilane (the silanecompound); however, ammonium chloride or amine hydrochloride is producedas a by-product by this reaction. Ammonium chloride is a white solid andas such accumulates in and clogs the exhaust lines of the CVD reactionapparatus. Amine hydrochloride salts are highly undesirable contaminantsin aminosilanes used for electrical applications because they can reactwith metals in the CVD chamber and degrade the electrical properties ofthe semiconductor material or lead the creation of other types ofdefects. More than that, these salts are known to sublimate by adissociation-recombination process generating HCl. Hydrogen chloride isa corrosive gas that can damage any process taking place in the CVDchamber as well as the chamber itself. Reactive chlorine from these orany other sources may cause these deleterious effects. Silane compoundssynthesized without using halogen containing reactants thereby beingfree of halogens and aminohalogens are highly desirable.

In CVD methods, it is therefore desired to have a precursor compoundthat is halogen free.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a typical reactor apparatus wherein the reaction vessel is anautoclave reactor fitted with a stirrer and connected to a manifoldcapable of providing vacuum and reactants.

FIG. 2 is a typical reactor apparatus wherein the reactor vessel isattached to a condenser allowing for hydrogen venting and a Dip-tubewith filter for removal of the product.

DETAILED DESCRIPTION OF THE INVENTION

A method for the synthesis of compounds having silicon-heteroatom (X)bonds or germanium heteroatom bonds without the formation of halogenbyproducts has been developed. The starting materials for thedehydrogenative coupling synthesis methods described herein are nothalogen containing compounds. All of the compounds produced by thedehydrogenative coupling synthesis described and claimed herein are“halogen free” without further purification, as the term “halogen free”is defined herein. It is believed that when halogens are present inprecursor compounds, these compounds are less stable. The compounds ofthe present invention are claimed in two forms. First, as new compoundsand second as compounds that are prepared halogen free without furtherpurification to remove halogens. Silicon and germanium are group IVbelements. This approach is based on the catalytic dehydrocoupling ofsilicon or germanium with a heteroatom, releasing hydrogen gas. A Si—Xor Ge—X bond is formed where X is a group Vb element selected from thegroup consisting of Nitrogen (N), Phosphorus (P), Arsenic (As) andAntimony (Sb). The process is catalyzed by transition metal catalysts.Catalysts may be heterogeneous or homogeneous. An illustration of thegeneral reaction for an amine is given by equation 1. An illustration ofthe general reaction for the group Vb heteroatoms N, P, As or Sb and thegroup IVb elements is given in equation 1A. The reaction may be carriedout in a solvent or without a solvent. The reaction may be carried outin a batch or continuous flow reactor.

R¹EH₃ +n(R²R³NH)═(R²R³N)_(n)EH_((3-n))R¹ +nH₂  1.

R¹EH³ +n(R²R³XH)═(R²R³X)_(n)EH_((3-n))R¹ +nH₂  1A.

Where X=N, P, As or Sb; n=1, 2 or 3; E is a group IVb element selectedfrom the group consisting of Si or Ge; X is a hetero atom selected fromthe group consisting of N, P, As or Sb; R¹=H, H₃E-, H₅E₂-; H₇E₃-; H₉E₄-;H₁₁E₅-; and R²=H, linear or branched C₁ to C₆ alkyl, linear or branchedC₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl,linear or branched C₁ to C₆ alkyl ether, silyl, trimethyl silyl, orlinear or branched C₁ to C₆ alkyl-substituted silyl. and R³ is H, linearor branched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linearor branched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ toC₆ alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl. In equation 1 above, the amine R²R³NH may bereplaced by a diamine, a triamine, a tetra amine, a silazane and acyclic secondary amine. Non-limiting examples of a diamine includeethylene diamine, 1,2-propylene diamine and similar diamines.Non-limiting examples of a triamine include diethylene triamine andsimilar compounds. Non-limiting examples of a tetra amine includetriethylenetetraamine and similar compounds. Non-limiting examples of asilazane include hexamethyl disilazane. Non-limiting examples of acyclic secondary amines include aziridine, azetidine, piperidine,pyrrolidine, pyrrole, imidazole, pyrazole, indole or any C-substitutedderivatives of the cyclic secondary amine and similar compounds. Anon-limiting list of C-substituted derivatives of the cyclic secondaryamines includes any alkyl substituted derivatives of cyclic secondaryamines such as 2-methyl piperidine, 3-methyl piperidine, 4-methylpiperidine, 2-methyl pyrrolidine, 3-methyl pyrrolidine, 2-methylpyrrole, 3-methyl pyrrole, 2-methyl indole, and 3-methyl indole.Secondary cyclic amines are heterocycles containing one or more N groupsand several carbon atoms in the backbone chain (ring). For examplepiperidine contains 5 carbons and Initrogen in hexagonal ring structure.Each carbon is attached to two pendant hydrogens, and the nitrogen isattached to one pendant hydrogen. A carbon-substituted heterocyclicsecondary amine contains a heterocyclic ring structure with pendantsubstituent groups other than hydrogen attached to one or more carbonatoms that make up the ring. Typical pendant substituent groups include:but are not limited to alkyl, alkenyl, alkynyl, aryl, alkyl ether,silyl, trimethyl silyl, or alkyl-substituted silyl. In equation 1A, whenX is P, As or Sb, R¹=H₃E-, H₅E₂-; H₇E₃-; H₉E₄-; H₁₁E₅-; R²=H, linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl. and R³ is H, linear or branched C₁ to C₆ alkyl,linear or branched C₁ to C₆ alkenyl, linear or branched C₁ to C₆alkynyl, C₁ to C₁₀ aryl, linear or branched C₁ to C₆ alkyl ether,trimethyl silyl, or linear or branched C₁ to C₆ alkyl-substituted silyl.The said compounds exclude compounds where R¹ is H₃E and R² and R³ areindependently C₁ or C₂ alkyl.

A non-limiting list of the members of the alkyl substituent groupscomprises: methyl, ethyl, propyl, iso-propyl, butyl, tert-butyl,sec-butyl, iso-butyl, pentyl, neopentyl, isopentyl, hexyl, isohexyl. Anon-limiting list of the members of the aryl substituent groupscomprises: phenyl, tolyl, xylyl, napthyl, pyridyl.

alkenyl is defined as any univalent aliphatic hydrocarbon radicalC_(n)H_(2n-1) (such as 2-butenyl CH₃CH:CHCH₂—) derived from an alkene byremoval of one hydrogen atom. Where n=2 to 8.

Alkynyl is defined as Any of a series of open chain hydrocarbons with acarbon-carbon triple bond and the general formula C_(n)H_(2n-2). Wheren=2 to 8.

Depending on the structure of the heteroatom compound and structure ofthe Si or Ge compound and the molar ratio of E to X a number ofmolecules containing E-X bonds can be formed. These molecules containingE-X bonds may be linear, branched, cyclic or combinations thereof.Examples linear, branched and cyclic and combinations and a method ofsynthesizing each are described.

A method for preparing the compound having the formula:

where n₁=1 to (2(k+1)−n₂; n₂=0 to (2(k+1)−n₁); k=2 to 6; R¹, R², R³ andR⁴ are independently selected from the group consisting of linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; E is a group IVb element selected from thegroup consisting of Si or Ge. The following compounds that are nothalogen free can be made by methods that include a halogen containingreactant and are excluded from the composition of matter claimscontained herein but are not excluded from the method of synthesisclaims contained herein. The excluded compounds include:[(R¹R²N)_(3-x)H_(x)Si—Si(NR³R⁴)_(3-y)H_(y)] wherein R¹, R², R³ and R⁴are independently any substituted or unsubstituted linear, branched orcyclic alkyl group, and x,y=0, 1 or 2, (R¹R²N)_(n)—SiH_((3-n))SiH₃,wherein R¹ is selected from a linear or branched C₃ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₁ to C₆ dialkylamino group, an electronwithdrawing group, a C₃ to C₁₀ cyclic alkyl group, and a C₆ to C₁₀ arylgroup; R² is selected from H, linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₆ alkynyl group, a C₁ to C₆ dialkylamino group, a C₃ to C₁₀ cyclicalkyl group, a C₆ to C₁₀ aryl group, an electron withdrawing group and aC₄ to C₁₀ aryl group; n=1 or 2; wherein R¹ and R² are linked together toform a ring selected from a substituted or unsubstituted aromatic ringor a substituted or unsubstituted aliphatic ring; and when n=2, and R¹and or R² or both R¹, or both R² are linked together to form a ring,((R)HN)₃—Si—Si—(NH(R))₃ Each R is independently selected from C₁ to C₄hydrocarbyl, (Et₂N)SiH₂—SiH₂(NEt₂), (Et₂N)SiH₂—SiH₂—SiH₂(NEt₂),SiH₃—SiH(NEt₂)—SiH(NEt₂)—SiH₃, [(CH₃)₃Si—)₂N]—SiH₂—SiH₂—SiH₂—[N(—Si(CH₃)₃)₂], [(CH₃)₃Si—)₂N]—SiH₂—SiH₂—SiH₂—SiH₂—[N (—Si(CH₃)₃)₂],

and further excluding H₃SiNEt₂ which has been reported as being halogenfree.a) contacting the reactants R¹R²NH and R³R⁴NH and E_(k)H_(2(k+1)) in thepresence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form (R¹R²N)_(n1)(R³R⁴N)_(n2)E_(k)H_((2(k+1)−n1−n2));e) separating the (R¹R²N)_(n1) (R³R⁴N)_(n2) E_(k)H_((2(k+1)−n1−n2)) fromthe reaction mixture; wherein the reaction mixture temperature may varyduring the synthesis and is maintained such that the temperature of thereaction mixture is not allowed to drop below about 0° C. and not exceedabout 300° C.

Structure formula for k=3; R¹=R²=isopropyl; n₁=1; n₂=0.

A method for preparing the compound having the formula:

where n=1 to 6; m=1 to 6; k=1 to 6; R¹ and R² are independently selectedfrom the group consisting of linear or branched C₁ to C₆ alkyl, linearor branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl; E is agroup IVb element selected from the group consisting of Si or Ge:a) contacting the reactants R¹NH(CH₂)_(n)NH(CH₂)_(m)NHR² andE_(k)H_((2k+2)), in the presence of a transition metal catalyst forminga reaction mixture; where the molar ratio of HE_(k)H_((2k+1)) toR¹NH(CH₂)_(n)NH(CH₂)_(m)NHR² is at least 3:1;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹N(CH₂)_(n)N(CH₂)_(m)NR²3(E_(k)H_((2k+1)));e) separating the product R¹N(CH₂)_(n)N(CH₂)_(m)NR² 3(E_(k)H_((2k+1)))from the reaction mixture;wherein the reaction temperature may vary during the synthesis and ismaintained such that the temperature of the reaction mixture is notallowed to drop below about 0° C. and not exceed about 300° C.Structure for k=3; R¹=ethyl; R²=ethyl; n=1; m=1:

A method for preparing the compound having the formula:

where one E is attached to 3 Nitrogens; n=1 to 6; m=1 to 6; R¹ and R²are independently selected from the group consisting of linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; E is a group IVb element selected from thegroup consisting of Si or Ge:a) contacting the reactants R¹NH(CH₂)_(n)NH(CH₂)_(m)NHR² and HE₃H₅ inthe presence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹N(CH₂)_(n)N(CH₂)_(m)NR²3EH₅;e) separating the product R¹N(CH₂)_(n)N(CH₂)_(m)NR² 3EH₅ from thereaction mixture;wherein the reaction mixture temperature may vary during the synthesisand is maintained such that the temperature of the reaction mixture isnot allowed to drop below about 0° C. and not exceed about 300° C.Sample structure for k=3; R¹=ethyl; R²=ethyl; n=1; m=1:

A method for preparing the compound having the formula:

where n=1 to 6; m=1 to 6; k=1 to 6; R¹ and R² are independently selectedfrom the group consisting of linear or branched C₁ to C₆ alkyl, linearor branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₁ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl; E is agroup IVb element selected from the group consisting of Si or Ge:a) contacting the reactants R¹NH(CH₂)_(n)NH(CH₂)_(m)NHR² andHE₂H₄E_(k)H_((2k+1)) in the presence of a transition metal catalystforming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹N(CH₂)_(n)N(CH₂)_(m)NR²E₂H₃(E_(k)H_(2k+1));e) separating the R¹N(CH₂)_(n)N(CH₂)_(m)NR² E₂H₃(E_(k)H_(2k+1)) from thereaction mixture;wherein the reaction temperature may vary during the synthesis and ismaintained such that the temperature of the reaction mixture is notallowed to drop below about 0° C. and not exceed about 300° C.Sample structure for k=3; R¹=ethyl; R²=ethyl; n=1; m=1:

A method for preparing the compound having the formula:

where one E is attached to one nitrogen; n=1 to 6; m=1 to 6; k=1 to 6;R¹ and R² are independently selected from the group consisting of linearor branched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linearor branched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ toC₆ alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; E is a group IVb element selected from thegroup consisting of Si or Ge:a) contacting the reactants R¹NH(CH₂)_(n)NH(CH₂)_(m)NHR² andHE₂H₄E_(k)H_((2k+1)) in the presence of a transition metal catalystforming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹N(CH₂)_(n)N(CH₂)_(m)NR²E₂H₄E_(k)H_((k+1));e) separating the R¹N(CH₂)_(n)N(CH₂)_(m)NR² E₂H₄E_(k)H_((2k+1)) from thereaction mixture;wherein the reaction temperature may vary during the synthesis and ismaintained such that the temperature of the reaction mixture is notallowed to drop below about 0° C. and not exceed about 300° C.Structure for k=1; R¹=ethyl; R²=ethyl; n=1; m=1:

A method for preparing the compound having the formula:

Compositions having a cyclic secondary amine structure above arereferred to as “cyclic R¹R²N—”.Where: n=1 or 2; k=2 to 6; R¹ and R² are independently selected from thegroup consisting of —CHR′—; —CHR′—CHR″—; —CHR′—CHR″—CHR′″—; ═CH—;—CR′═CR″—; —CR′═N—CR″═; ═CH—; —CHR′═CHR″— and R′, R″, and R′″ areindependently selected from the group consisting of linear or branchedC₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear or branchedC₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆ alkylether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; and E is a group IVb element selected from thegroup consisting of Si or Ge. The following compounds that are nothalogen free can be made by methods that include a halogen containingreactant and are excluded from the composition of matter claimscontained herein but are not excluded from the method of synthesisclaims contained herein. The excluded compounds include:

and wherein R=CH₃, Ph.a) contacting the reactants cyclic R¹R²NH and HE_(k)H_((2k+1)), in thepresence of a transition metal catalyst forming a reaction mixture;where the molar ratio of HE_(k)H_((2k+1)) to cyclic R¹R²NH is at least3:1;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form cyclicR¹R²N-E_(k)H_((2k+1)));e) separating the cyclic R¹R²N-E_(k)H_((2k+1))) from the reactionmixture;wherein the reaction mixture temperature may vary during the synthesisand is maintained such that the temperature of the reaction mixture isnot allowed to drop below about 0° C. and not exceed about 300° C.Structure for k=3; cyclic R¹R²NH=pyrrolidine; R¹ and R²=—CHR′—CHR″—; andR′, R″=H:

A method for the synthesis of a compound having the formula:

Wherein: n=1 or 2; k=1 to 6; R¹ and R² are independently selected fromthe group consisting of —CHR′—; —CHR′—CHR″—; —CHR′—CHR″—CHR′″—; ═CH—;—CR′═CR″—; —CR′═N—CR″═; ═CH—; —CHR′═CHR″— and R′, R″, and R′″ areindependently selected from the group consisting of linear or branchedC₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear or branchedC₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆ alkylether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; and E is a group IVb element selected from thegroup consisting of Si or Ge. The said compounds exclude the followinghalogen free compounds wherein n=2; k=1, E=Si and R¹,R² are both—CR′═CR″— and wherein R′ and R″ are both H.a) contacting the reactants cyclic R¹R²NH and HE_(k)H_((2k+1)), in thepresence of a transition metal catalyst forming a reaction mixture;where the molar ratio of HE_(k)H_((2k+1)) to cyclic R₁R₂NH is about 1:1to about 1:5;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form cyclic R¹R²N-E_(k)H_((2k))—NR¹R² cyclic;e) separating the cyclic R¹R²N-E_(k)H_((2k))—N R¹R² cyclic from thereaction mixture; wherein the reaction temperature may vary during thesynthesis and is maintained such that the temperature during thereaction is not allowed to drop below about 0° C. and not exceed about300° C.

Preferably, the secondary cyclic amine is selected from the groupconsisting of

aziridine, azetidine, piperidine, pyrrolidine, pyrrole, imidazole,pyrazole, indole or any C-substituted derivatives of the cyclicsecondary amine; E is a group IVb element selected from the groupconsisting of Si or Ge.

The terms chlorine free, halide free, halogen free and aminochlorinefree and aminohalogen free are used herein to define compounds thatcontain less than 5 ppm of halogen, preferably less than 3 ppm halogenand more preferably less than 1 ppm halogen. The term halogen includesfluorine, chlorine, bromine and iodine. In order to achieve halogen freeproducts, the starting reactants and catalyst of the present inventionare halogen free. The terms aminohalide and aminohalogen refer to anyamine including but not limited to ammonia, and organic amines which areassociated with a halogen. This association may be a salt, a complex ora chemical bond. The terms “reaction vessel” and “reactor” refer to thesame equipment, have the same meaning and are used interchangeablyherein. The reactor may be a vessel for batch synthesis or a flowthrough vessel to facilitate a continuous synthesis. The term “reactionmixture” refers to the combination of reactants, catalyst and optionallysolvent wherein a reaction takes place to form the product. The term“halogen free” as used in this disclosure and the claims refers to thelevel of halogen present from all sources such as but not limited tohalogen ions, bound halogen and aminohalogens.

A compound having the formula:

where X=P, As, Sb; where n₁=1; n₂=0 to (2(k+2)−n₁); k=1 to 6; R¹, R², R³and R⁴ are independently selected from the group consisting of linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; E is a group IVb element selected from thegroup consisting of Si or Ge.

A method of preparing the compounds having the structure (R¹R²X)_(n1)(R³R⁴X)_(n2)E_(k)H_((2(k+2)−n1−n2)), comprising:

a) contacting the reactants R¹R²XH and R³R⁴XH and E_(k)H_(2(k+1)) in thepresence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form (R¹R²X)_(n1) (R³R⁴X)_(n2)E_(k)H_((2(k+1)−n1−n2));e) separating the (R¹R²X)_(n1) (R³R⁴X)_(n2) E_(k)H_((2(k+1)−n1−n2)) fromthe reaction mixture; wherein the reaction mixture temperature may varyduring the synthesis and is maintained such that the temperature of thereaction mixture is not allowed to drop below about 0° C. and not exceedabout 300° C.

A compound having the formula:

where X=P, As, Sb; where n=1 to 6; m=1 to 6; k=1 to 6; R¹=H, linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; R²=H, linear or branched C₁ to C₆ alkyl, linearor branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl; E is agroup IVb element selected from the group consisting of Si or Ge.

A method of preparing the compounds having the structureR¹X(CH₂)_(n)X(CH₂)_(m)XR² 3(E_(k)H_((2k+1))), comprising:

a) contacting the reactants R¹XH(CH₂)_(n)XH(CH₂)_(m)XH R² andHE_(k)H_((2k+1)), in the presence of a transition metal catalyst forminga reaction mixture; where the molar ratio of HE_(k)H_((2k+1)) toR¹XH(CH₂)_(n)XH(CH₂)_(m)XH R² is at least 3:1;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹X(CH₂)_(n)X(CH₂)_(m)X R²3(E_(k)H_((2k+1)));e) separating the product R¹X(CH₂)_(n)X(CH₂)_(m)X R² 3(E_(k)H_((2k+1)))from the reaction mixture;wherein the reaction temperature may vary during the synthesis and ismaintained such that the temperature of the reaction mixture is notallowed to drop below about 0° C. and not exceed about 300° C.

A compound having the formula:

where X=P, As, Sb; n=1 to 6; m=1 to 6; k=3 to 6; R¹=H, linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; R²=H, linear or branched C₁ to C₆ alkyl, linearor branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl; E is agroup IVb element selected from the group consisting of Si or Ge.

A method of preparing the compounds having the structureR¹X(CH₂)_(n)X(CH₂)_(m)XR² 3EH₅, comprising:

a) contacting the reactants R¹XH(CH₂)_(n)XH(CH₂)_(m)XH R² and HE₃H₅ inthe presence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹X(CH₂)_(n)X(CH₂)_(m)X R²3EH₅;e) separating the product R¹X(CH₂)_(n)X(CH₂)_(m)X R² 3EH₅ from thereaction mixture;wherein the reaction mixture temperature may vary during the synthesisand is maintained such that the temperature of the reaction mixture isnot allowed to drop below about 0° C. and not exceed about 300° C.

A compound having the formula:

where X=P, As, Sb; n=1 to 6; m=1 to 6; k=2 to 6; R¹=H, linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; R²=H, linear or branched C₁ to C₆ alkyl, linearor branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl; E is agroup IVb element selected from the group consisting of Si or Ge.

A method of preparing the compounds having the structureR¹X(CH₂)_(n)X(CH₂)_(m)X R² E₂H₃E_(k)H_((2k+1)), comprising:

a) contacting the reactants R¹XH(CH₂)_(n)XH(CH₂)_(m)XH R² andHE₂H₃E_(k)H_(2k) in the presence of a transition metal catalyst forminga reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹X(CH₂)_(n)X(CH₂)_(m)X R²E₂H₃E_(k)H_((2k+1));e) separating the R¹X(CH₂)_(n)X(CH₂)_(m)X R² E₂H₃E_(k)H_((2k+1)) fromthe reaction mixture;wherein the reaction temperature may vary during the synthesis and ismaintained such that the temperature of the reaction mixture is notallowed to drop below about 0° C. and not exceed about 300° C.

A compound having the formula:

where X=P, As, Sb; n=1 to 6; m=1 to 6; k=1 to 6; R¹=H, linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; R²=H, linear or branched C₁ to C₆ alkyl, linearor branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl; E is agroup IVb element selected from the group consisting of Si or Ge.

A method of preparing the compounds having the structureR¹X(CH₂)_(n)X(CH₂)_(m)X R²E_(k)H_((2k+1)), comprising:

a) contacting the reactants R¹XH(CH₂)_(n)XH(CH₂)_(m)XH R² andHE_(k)H_((2k+1)) in the presence of a transition metal catalyst forminga reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹X(CH₂)_(n)X(CH₂)_(m)XR²E_(k)H_((2k+1));e) separating the R¹X(CH₂)_(n)X(CH₂)_(m)XR²E_(k)H_((2k+1)) from thereaction mixture; wherein the reaction temperature may vary during thesynthesis and is maintained such that the temperature of the reactionmixture is not allowed to drop below about 0° C. and not exceed about300° C.

A compound having the formula:

Wherein n=1; k=1 to 6; X=P, As, Sb; R¹ and R² are independently selectedfrom the group consisting of —CHR′—; —CHR′—CHR″—; —CHR′—CHR″—CHR′″—;═CH—; —CR′═CR″—; ═CH—; —CHR′═CHR″—; and R′, R″, and R′″ areindependently selected from the group consisting of H, linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; and E is a group IVb element selected from thegroup consisting of Si or Ge.

A method of preparing the compounds having the structure cyclicR¹R²X-E_(k)H_((2k+1)), comprising:

a) contacting the reactants cyclic R¹R²XH and HE_(k)H_((2k+1)), in thepresence of a transition metal catalyst forming a reaction mixture;where the molar ratio of HE_(k)H_((2k+1)) to cyclic R¹R²XH is at least3:1;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form cyclicR¹R²X-E_(k)H_((2k+1)));e) separating the cyclic R¹R²X-E_(k)H_((2k+1))) from the reactionmixture;wherein the reaction mixture temperature may vary during the synthesisand is maintained such that the temperature of the reaction mixture isnot allowed to drop below about 0° C. and not exceed about 300° C.

A compound having the formula:

Wherein: X=P, As, Sb; n=1 or 2; k=1 to 6; R¹ and R² are independentlyselected from the group consisting of —CHR′—; —CHR′—CHR″—;—CHR′—CHR″—CHR′″—; ═CH—; —CR′═CR″—; ═CH—; —CHR′═CHR″— and R′, R″, andR′″ are independently selected from the group consisting of H, linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; and E is a group IVb element selected from thegroup consisting of Si or Ge.

A method of preparing the compounds having the structure comprising:

a) contacting the reactants cyclic R₁R₂XH and HE_(k)H_((2k+1)), in thepresence of a transition metal catalyst forming a reaction mixture;where the molar ratio of HE_(k)H_((2k+1)) to cyclic R¹R²XH is about 1:2;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form cyclicR¹R²X-E_(k)H_((2k1-2))—X R¹R² cyclic;e) separating the cyclic R¹R²X-E_(k)H_((2k1-2))—X R¹R² cyclic from thereaction mixture; wherein the reaction temperature may vary during thesynthesis and is maintained such that the temperature during thereaction is not allowed to drop below about 0° C. and not exceed about300° C.

The following method describes the synthesis of aminosilanes comprising:

a) contacting the amine and silane reactants in the presence of atransition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form a product;e) separating the product from the reaction mixture;

A method for preparing the compound having the formula:

where one E is attached to one nitrogen; m=1 to 6; k=1 to 6; R¹ and R²are independently selected from the group consisting of linear orbranched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear orbranched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; E is a group IVb element selected from thegroup consisting of Si or Ge:a) contacting the reactants R¹NH(CH₂)mNHR² and HE_(k)H_((2k+1)) in thepresence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹NH(CH₂)_(m)NR²E_(k)H_((2k+1));e) separating the R¹NH(CH₂)_(m)NR² E_(k)H₍₂₊₁₎ from the reactionmixture; wherein the reaction temperature may vary during the synthesisand is maintained such that the temperature of the reaction mixture isnot allowed to drop below about 0° C. and not exceed about 300° C.

A method for preparing the compound having the formula:

where one E is attached to 2 Nitrogens; m=1 to 6; R¹ and R² areindependently selected from the group consisting of linear or branchedC₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear or branchedC₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆ alkylether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; E is a group IVb element selected from thegroup consisting of Si or Ge:a) contacting the reactants R¹N (CH₂)mNHR² and HE₂H₃E_(k)H_(2k+1) in thepresence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹N (CH₂)_(m)NR²2EH₃E_(k)H_(2k+1);e) separating the product R¹N (CH₂)_(m)NR² 2EH₃E_(k)H_(2k+1) from thereaction mixture; wherein the reaction mixture temperature may varyduring the synthesis and is maintained such that the temperature of thereaction mixture is not allowed to drop below about 0° C. and not exceedabout 300° C.

A method for preparing the compound having the formula:

where one E is attached to 1 Nitrogen; m=1 to 6; R¹ and R² areindependently selected from the group consisting of linear or branchedC₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear or branchedC₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆ alkylether, silyl, trimethyl silyl, or linear or branched C₁ to C₆alkyl-substituted silyl; E is a group IVb element selected from thegroup consisting of Si or Ge:a) contacting the reactants R¹N (CH₂)_(m)NHR² and HEH₂E_(k)H_(2k+1) inthe presence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹N (CH₂)_(m)NR²EHE_(k)H_(2k+1);e) separating the product R¹N (CH₂)_(m)NR² EHE_(k)H_(2k+1) from thereaction mixture; wherein the reaction mixture temperature may varyduring the synthesis and is maintained such that the temperature of thereaction mixture is not allowed to drop below about 0° C. and not exceedabout 300° C.

A method for preparing the compound having the formula:

where m=1 to 6; k=1 to 6; R¹ and R² are independently selected from thegroup consisting of linear or branched C₁ to C₆ alkyl, linear orbranched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl; E is agroup IVb element selected from the group consisting of Si or Ge:a) contacting the reactants R¹NH(CH₂)_(m)NHR² and HE_(k)H_((2k+1)), inthe presence of a transition metal catalyst forming a reaction mixture;where the molar ratio of HE_(k)H_((2k+1)) toR¹NH(CH₂)_(n)NH(CH₂)_(m)NHR² is at least 3:1;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹NH(CH₂)_(m)NR²2(E_(k)H_((2k+1)));e) separating the product R¹NH(CH₂)_(m)NR² 2(E_(k)H_((2k+1))) from thereaction mixture; wherein the reaction temperature may vary during thesynthesis and is maintained such that the temperature of the reactionmixture is not allowed to drop below about 0° C. and not exceed about300° C.

Formation of monosubstituted compounds A, B and C is favored overformation of bis-substituted compound D by decreasing theE_(k)H_(2k+2)/Diamine ratio. However, formation of compounds A, B and Cmay be simultaneous and mixtures with different molar ratios of thethree compounds will be synthesized. A/B/C molar ratios will varydepending on the nature of R¹ and R² groups and the length of the —CH₂—chain (value of m) as well as on the reaction conditions such astemperature, reaction time or catalyst. Bulkier R groups and longerchains are expected to favor the formation of A, whereas chains with m=1to 3 are expected to favor the formation of compounds B and C.

A method for preparing the compound having the formula:

where X=P, As, Sb; m=1 to 6; k=1 to 6; R¹, R² and R³ are independentlyselected from the group consisting of H, linear or branched C₁ to C₆alkyl, linear or branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl,trimethyl silyl, or linear or branched C₁ to C₆ alkyl-substituted silyl;E is a group IVb element selected from the group consisting of Si or Gecomprising:a) contacting the reactants R¹R³X(CH₂)mXHR² and HE_(k)H_((2k+1)) in thepresence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹R³X (CH₂)mXR²E_(k)H_((2k+1));e) separating the R¹R³X(CH₂)mXR² E_(k)H_((2k+1)) from the reactionmixture; wherein the reaction temperature may vary during the synthesisand is maintained such that the temperature of the reaction mixture isnot allowed to drop below about 0° C. and not exceed about 300° C.

A method for preparing the compound having the formula:

where X=P, As, Sb; m=1 to 6; k=3 to 6; R¹ is selected from the groupconsisting of H, linear or branched C₁ to C₆ alkyl, linear or branchedC₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl,linear or branched C₁ to C₆ alkyl ether, silyl, trimethyl silyl, orlinear or branched C₁ to C₆ alkyl-substituted silyl; R² is selected fromthe group consisting of H, linear or branched C₁ to C₆ alkyl, linear orbranched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl; E is agroup IVb element selected from the group consisting of Si or Gecomprising:a) contacting the reactants R¹X (CH₂)_(m)XHR² and H₃EH₂E-E_(k)H_(2k+1)in the presence of a transition metal catalyst forming a reactionmixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form [R¹X(CH₂)_(m)XR²][EHEH₂E_(k)H_(2k+1)];e) separating the product [R¹X (CH₂)_(m)XR²][EHEH₂E_(k)H_(2k+1)] fromthe reaction mixture; wherein the reaction mixture temperature may varyduring the synthesis and is maintained such that the temperature of thereaction mixture is not allowed to drop below about 0° C. and not exceedabout 300° C. comprising:

A method for preparing the compound having the formula comprising:

[(R¹X(CH₂)_(m) XR²)(EH₁E_(k)H_(2k+1))]

where X=P, As, Sb; m=1 to 5; R¹ and R² are independently selected fromthe group consisting of linear or branched C₁ to C₆ alkyl, linear orbranched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silylcomprising:a) contacting the reactants R¹X (CH₂)_(m)XHR² and HEH₂E_(k)H_(2k+1) inthe presence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹X (CH₂)_(m)XR²EHE_(k)H_(2k+1);e) separating the product R¹X (CH₂)_(m)XR² EHE_(k)H_(2k+1) from thereaction mixture; wherein the reaction mixture temperature may varyduring the synthesis and is maintained such that the temperature of thereaction mixture is not allowed to drop below about 0° C. and not exceedabout 300° C.

A method for preparing the compound having the formula comprising:

where X=P, As, Sb; m=1 to 5; R¹, R² and R³ are independently selectedfrom the group consisting of linear or branched C₁ to C₆ alkyl, linearor branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl.or branched C₁ to C₆ alkyl-substituted silyl comprising:a) contacting the reactants R¹R³X (CH₂)_(m)XHR² and HEH₂E_(k)H_(2k+1) inthe presence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form R¹R³X (CH₂)_(m)XHR²EH₂E_(k)H_(2k+1);e) separating the product R¹R³X (CH₂)_(m)XHR² EH₂EkH2k₊₁ from thereaction mixture; wherein the reaction mixture temperature may varyduring the synthesis and is maintained such that the temperature of thereaction mixture is not allowed to drop below about 0° C. and not exceedabout 300° C.

The term “maintaining . . . temperature” as used herein means heating orcooling as required to produce a temperature within the specifiedminimum and maximum temperature. The order of addition of amine andsilane to the reaction vessel may be either amine first or silane first.When the starting materials are halogen free, the products will behalogen and amino halogen free.

The following method describes a method for the synthesis ofdiisopropylaminodisilane comprising:

a) contacting the reactants diisopropylamine and disilane in thepresence of a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) heating the reaction mixture to a temperature between about 75° C. toabout 200° C.;d) allowing the reaction to proceed;e) separating the diisopropylaminodisilane from the reaction mixture.

Heterogeneous catalysts suitable in the present invention includetransition metal catalysts and rare earth elements. Catalysts areselected from the group consisting of: Sc, Ti, V, Cr, Mn, Fe, Co, Ni,Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os,Ir, Pt, Au, Hg, Yb and U. Preferred catalysts are selected from thegroup consisting of Ru, Pd, Rh, Ir, Fe, Ni, Pt, Cr, Cu and Au. Morepreferred catalysts are selected from the group consisting of Rh, Pd, Ruand Pt. A most preferred catalyst is Ru and Ru on carbon. An additionalpreferred catalyst is Pd on MgO.

Catalysts of the present invention are preferably affixed to a support.The support is a solid with a high surface area. Typical supportmaterials include but are not limited to: alumina, MgO, zeolites,carbon, Monolith cordierite, diatomaceous earth, silica gel,silica/alumina, ZrO and TiO₂. Preferred supports are carbon, alumina,silica and MgO. A more preferred support is carbon. Supports have a BETsurface area ranging between about 1 m²/g to about 3,000 m²/g. Apreferred range is about 100 m²/g to about 2,000 m²/g. Metal loading ofthe catalyst ranges between about 0.01 weight percent to about 50 weightpercent. A preferred range is about 0.5 weight percent to about 20weight percent. A more preferred range is about 0.5 weight percent toabout 10 weight percent. Catalysts requiring activation may be activatedby a number of known methods. Heating the catalyst under vacuum is apreferred method. The catalyst may be activated before addition to thereaction vessel or in the reaction vessel prior adding the reactants.

The catalyst may contain a promoter. Promoters are substances whichthemselves are not catalysts, but when mixed in small quantities withthe active catalysts increase their efficiency (activity and/orselectivity). Promoters are usually metals such as Mn, Ce, Mo, Li, Re,Ga, Cu, Ru, Pd, Rh, Ir, Fe, Ni, Pt, Cr, Cu and Au and/or their oxides.They can be added separately to the reactor vessel or they can be partof the catalysts themselves. For example, Ru/Mn/C (ruthenium on carbonpromoted by manganese) or Pt/CeO2/Ir/SiO2 (Platinum on silica promotedby ceria and iridium). Some promoters can act as catalyst by themselvesbut their use in combination with the main catalyst can improve the maincatalyst's activity. A catalyst may act as a promoter for othercatalysts. In this context, the catalyst can be called a bimetallic (orpolymetallic) catalyst. For example, Ru/Rh/C can be called eitherruthenium and rhodium on carbon bimetallic catalyst or ruthenium oncarbon promoted by rhodium. An active catalyst is a material that actsas a catalyst in a specific chemical reaction.

Catalysts may require activation which is typically carried out undervacuum and at elevated temperatures. Typically catalysts are activatedat about 125° C. and at about −14 psig which is about 1 Torr. Activationconditions will vary somewhat by the catalyst selected. Conditions foractivating the various catalysts are known in the art. Activatedcatalysts may be stored for future use. Catalysts of the presentinvention do not comprise a halogen.

When solvents are used in the present invention, solvents that arenon-reactive with the reactants are selected. Solvents are anhydrous anddo not deactivate (poison) the catalyst. A non-limiting list of suchsolvents include: alkanes such as C₅ to C₂₀ linear, branched or cyclicalkanes and mixtures thereof; alkenes such as 1-octadecene,cyclooctadiene and cyclohexene; chloroalkanes such as methylene chlorideand ethylene chloride; arenes such as toluene, xylene, mesitylene andnaftalene and heterocycles such as quinoline and pyridine and mixturesthereof. A preferred solvent is n-octadecane. Preferably, the solventshould be selected such that its boiling point differs from the boilingpoint of the product compound by about 10° C.

Inert gas used in the present invention is not reactive under thereaction conditions. A non-limiting list of inert gases includes:helium, argon and nitrogen. A preferred gas is helium.

An autoclave such as a Parr autoclave equipped with a mechanical stirredis a suitable reaction vessel. For monosubstituted silanes or germanes,the molar ratio of heterocompound to silane or germane at the start ofthe reaction is within the range of about 2 to about 0.2, preferablewithin the range of about 1 to about 0.3. For bis-disubstituted silanesor germanes, the molar ratio of heterocompound to silane or germane atthe start of the reaction is within the range of about 5 to about 2.

The method for the synthesis of halogen and aminohalogen freediisopropylaminodisilane in example 1 comprises:

a) adding a catalyst to a reaction vessel;b) applying dynamic vacuum to the reaction vessel;c) heating the reaction vessel to activate the catalyst;d) maintaining vacuum and temperature of activation until the catalysthas been activated;e) cooling the reaction vessel room temperature;f) filling the reaction vessel with an inert gas to a pressure of aboutone atmosphere;g) adding diisopropylamine to the reaction vessel;h) adding solvent to the reaction vessel;i) cooling the reaction vessel to a temperature between about −78° C. toabout −140° C.;j) adding disilane to the reactor forming a reaction mixture;k) heating the reactor to a temperature between about 75° C. to about200° C.;l) stirring the heated reaction mixture;m) monitoring the pressure in the reactor vessel until the pressurestops increasing;n) cooling the reactor to about room temperature;o) capturing volatiles in a cryotrap cooled to a temperature betweenabout −140° C. to about −196° C.p) monitoring the pressure in the reactor vessel until the pressurestops decreasing; andq) recovering diisopropylaminodisilane from the reactor vessel.Steps b to e are omitted if the catalyst of step a) is activated or doesnot require activation.

Recovery of the diisopropylaminodisilane can be carried out bydistillation directly from the reactor vessel. The catalyst can berecycled for subsequent batches.

The term cryotrapping means condensing a gaseous material in a cryotrap.

EXAMPLES Example 1. Synthesis of Diisopropylaminodisilane “DIPADS”:Si₂H₆+(^(i)Pr)₂NH=(^(i)Pr)₂NSi₂H₅+H₂

DIPADS (diisopropylaminodisilane also known as N,N-diisopropyl,N-disilylamine) was synthesized in a pressurized reactor vessel by thereaction between disilane and diisopropylamine catalyzed by commerciallyavailable Ruthenium on carbon in n-octadecane as a solvent: A 0.3 Lautoclave (reaction vessel) equipped with a mechanical stirrer, athermocouple, a pressure gauge and a pressure transducer and 3 meteringvalves, FIG. 1, was charged with 6 g (0.003 mmol of ruthenium) of 5%weight ruthenium on carbon catalyst. The reactor was then heated underdynamic vacuum at 125° C. for 3 hr. activating the catalyst. Aftercooling down to room temperature, the reactor was filled with helium at1 atmosphere (“atm”) pressure, sealed and disconnected from themanifold. Inside a glove box, 20.7 g (0.205 mol) of diisopropylamine and75 g of n-octadecane were added to the reactor. Then, the reactor wastaken out from the glove box and reconnected to the manifold and it wascooled down to −130° C. in a liquid nitrogen bath. 30 g (0.453 mol) ofdisilane were transferred to the reactor through the manifold. Thereactor was then heated up to 150° C. After stirring at 400 rpm for 27hr, pressure increased about 160 psi. Then, the reactor was cooled downto RT. Volatiles were cryotrapped in a stainless steel lecture bottle(“SSLB”). The reaction vessel pressure dropped to 45 Torr. Thediisopropyoaminodisilane was recovered from the reaction vessel. Theresulting solution contained 10% (9.9 g) of DIPADS. The non-isolatedyield was 30%.

The term “non-isolated yield” means the yield is determined by weighingthe reaction crude and estimating the amount of product by itschromatogram. The term “isolated yield” means the product was purifiedand weighed with the percent yield being determined by the percent oftheoretical the amount weighed represents.

A solvent free method for the synthesis of chlorine freediisopropylaminodisilane for example 2 comprises:

a) adding a catalyst to a reaction vessel;b) applying dynamic vacuum to the reaction vessel;c) heating the reaction vessel to activate the catalyst;d) maintaining vacuum and temperature of activation until the catalystis activated;e) cooling the reaction vessel to about room temperature;f) filling the reaction vessel with an inert gas to a pressure of aboutone atmosphere;g) adding diisopropylamine to the reaction vessel;h) cooling the reaction vessel to a temperature between about −78° C.and about −140° C.;i) adding disilane to the reaction vessel forming a reaction mixture;j) heating the reaction vessel to a temperature between about 75° C. toabout 200° C.;k) stirring the heated reaction mixture;l) monitoring the pressure in the reaction vessel until the pressurestops increasing;m) cooling the reaction vessel to about room temperature;n) capturing volatiles in a cryotrap cooled to a temperature betweenabout −140° C. to about −196° C.;o) monitoring the pressure in the reactor vessel until the pressurestops decreasing; andp) recovering the diisopropyoaminodisilane from the reactor vessel.Steps b to e are omitted if the catalyst of step a) is activated.

Example 2

The solvent free synthesis of chlorine and aminochlorine free DIPADS ina pressurized reactor from disilane and diisopropylamine catalyzed bycommercially available Ruthenium on carbon. A 0.3 L autoclave equippedwith a mechanical stirrer, a thermocouple, a pressure gauge and apressure transducer and 3 metering valves was charged with 6 g (0.003mmol of ruthenium) of 5% weight ruthenium on carbon catalyst. Thereactor was then heated under dynamic vacuum at 125° C. for 3 hr. Aftercooling down to room temperature, the reactor was filled with 1 atm. ofhelium, sealed and disconnected from the manifold. Inside a glove box,20.7 (0.205 mol) of diisopropylamine were added. Then, the reactor wastaken out from the glove box and reconnected to the manifold and it wascooled down to −130° C. in a liquid nitrogen bath. 30 g of disilane(0.453 mol) were transferred to the reactor through the manifold. Thereactor was then heated up to 150° C. After stirring at 400 rpm for 24hr, pressure increased around 100 psi. Then, the reactor was cooled downto RT. Volatiles were cryotrapped in a SSLB. The reaction vesselpressure dropped to 45 Torr. The resulting solution in the reactorvessel contained 65% (17 g) of DIPADS. The diisopropyoaminodisilane wasrecovered from the reactor vessel. The non-isolated yield was 52%.

The following method for the synthesis of compounds havingsilicon-heteroatom bonds without the formation of halogen salt byproducts has been developed. Reactants such as silane and phosphine arecombined in the presence of a catalyst and heated to produce halogenfree trisilylphosphine. The general reaction is given in the followingequation:

PH₃+3SiH₄=P(SiH₃)₃+3H₂

The reaction may be carried out in a solvent or without a solvent.

Example 3 Synthesis of Trisilylphosphine: PH₃+3SiH₄=P(SiH₃)₃+3H₂

A method for the synthesis of trisilylphosphine for example 3 comprises:

a) adding a catalyst to a reaction vessel;b) applying dynamic vacuum to the reaction vessel;c) heating the reaction vessel to activate the catalyst;d) maintaining vacuum and temperature of activation until the catalystis activated;e) cooling the reaction vessel to about room temperature;f) filling the reaction vessel with an inert gas to a pressure of aboutone atmosphere;g) cooling the reaction vessel to a temperature between about −78° C. toabout −140° C.;h) adding phosphine to the reaction vessel;i) adding silane to the reactor;j) heating the reactor to a temperature between about 75° C. to about200° C.;k) stirring the heated reaction mixture;l) monitoring the pressure in the reactor vessel until the pressurestops increasing;m) cooling the reactor to about room temperature;n) capturing volatiles in a cryotrap cooled to a temperature betweenabout −140° C. to about −196° C.;o) monitoring the pressure in the reactor vessel until the pressurestops decreasing; andp) recovering the trisilylphosphine from the reactor vessel.Steps b to e are omitted if the catalyst of step a) is activated.

Recovery of the trisilylphosphine is carried out by distillationdirectly from the reactor vessel. The catalyst can be recycled forsubsequent batches.

Example 3

A method for synthesizing chlorine free trisilylphosphine in apressurized reactor from silane and phosphine catalyzed by commerciallyavailable Ruthenium on carbon would comprise. A 0.3 L autoclave equippedwith a mechanical stirrer, a thermocouple, a pressure gauge and apressure transducer and 3 metering valves is charged with 10 g (0.005mol of ruthenium) of 5% weight ruthenium on carbon catalyst. The reactoris then heated under dynamic vacuum at 125° C. for 3 hr. After coolingdown to room temperature, the reactor is filled with 1 atm. of heliumthen cooled down to −130° C. in the liquid nitrogen bath. 15 g (0.44mol) of phosphine and 50 g (1.6 mol) of silane are transferred to thereactor through the manifold. The reactor is then heated up to 150° C.After stirring at 400 rpm for 23 hr, the reactor is cooled down to RT.Volatiles are cryotrapped in a SSLB. The reaction vessel pressure willdrop to about 45 Torr. The trisilylphosphine is recovered from thereactor vessel.

The molar ratio of phosphine to silane at the start of the reaction iswithin the range of about 1:3 to about 1:9.

A method for the synthesis of halogen free tris-disilylamine, (Si₂H₅)₃N,for example 4 comprises:

a) adding a catalyst to a reaction vessel;b) applying dynamic vacuum to the reaction vessel;c) heating the reaction vessel to activate the catalyst;d) maintaining vacuum and temperature of activation until the catalystis activated;e) cooling the reaction vessel to about room temperature;f) filling the reaction vessel with an inert gas to a pressure of aboutone atmosphere;g) cooling the reaction vessel to a temperature between about −78° C.and about −140° C.;h) adding ammonia to the reaction vessel;i) adding disilane to the reactor;j) heating the reactor to a temperature between about 75° C. to about200° C.;k) stirring the heated reaction mixture;l) monitoring the pressure in the reactor vessel until the pressurestops increasing;m) cooling the reactor to about room temperature;n) capturing volatiles in a cryotrap cooled to a temperature betweenabout −140° C. to about −196° C.;o) monitoring the pressure in the reactor vessel until the pressurestops decreasing; andp) recovering the tris-disilylamine from the reactor vessel.Steps b to e are omitted if the catalyst of step a is activated.

Example 4. Synthesis of Halogen Free tris-disilylamine,3Si₂He+NH₃═(Si₂H₅)₃N+3H₂

A method for synthesizing halogen free tris-disilylamine (Si₂H₅)₃N in apressurized reactor from disilane and ammonia catalyzed by commerciallyavailable Ruthenium on carbon would comprise. A 0.3 L autoclave equippedwith a mechanical stirrer, a thermocouple, a pressure gauge and apressure transducer and 3 metering valves is charged with 17 g (0.0085mol of ruthenium) of 5% weight ruthenium on carbon catalyst. The reactoris then heated under dynamic vacuum at 125° C. for 3 hr. After coolingdown to room temperature, the reactor is filled with 1 atm. of heliumthen cooled down to −130° C. in a liquid nitrogen bath. 10 g (0.588 mol)of ammonia and 150 g (2.41 mol) of disilane are transferred to thereactor through the manifold. The reactor is then heated up to 150° C.After stirring at 400 rpm for 23 hr, the reactor is cooled down to RT.Volatiles are cryotrapped in a SSLB. The reaction vessel pressure willdrop to about 45 Torr. The tris-disilylamine is recovered from thereactor vessel.

The molar ratio of amine to disilane at the start of the reaction waswithin the range of about 1:3 to about 1:5.

A solvent free method for the synthesis of halogen freediisopropylaminotrisilane (DIPATS) for example 5 comprises:

a) adding a catalyst to a reaction vessel;b) applying dynamic vacuum to the reaction vessel;c) heating the reaction vessel to activate the catalyst;d) maintaining vacuum and temperature of activation until the catalystis activated;e) cooling the reaction vessel to about room temperature;f) filling the reaction vessel with an inert gas to a pressure of aboutone atmosphere;g) adding diisopropylamine to the reaction vessel;h) cooling the reaction vessel to a temperature between about −78° C.and about −140° C.;i) adding trisilane to the reactor;j) heating the reactor to a temperature between about 75° C. to about200° C.;k) stirring the heated reaction mixture;l) monitoring the pressure in the reactor vessel until the pressurestops increasing;m) cooling the reactor to about room temperature;n) capturing volatiles in a cryotrap cooled to a temperature betweenabout −140° C. to about −196° C.;o) monitoring the pressure in the reactor vessel until the pressurestops decreasing; andp) recovering the diisopropyoaminotrisilane from the reactor vessel.Steps b to e are omitted if the catalyst of step a) is activated.

Example 5. Synthesis of Si₃He+(^(i)Pr)₂NH=(^(i)Pr)₂NSi₃H₇+H₂

A method for synthesizing halogen free diisopropylaminotrisilane(DIPATS) in a pressurized reactor from trisilane and diisopropylaminecatalyzed by commercially available Ruthenium on carbon comprises. A 0.3L autoclave equipped with a mechanical stirrer, a thermocouple, apressure gauge and a pressure transducer and 3 metering valves wascharged with 6 g (0.003 mmol of ruthenium) of 5% weight ruthenium oncarbon catalyst. The reactor was then heated under dynamic vacuum at125° C. for 3 hr. After cooling down to room temperature, the reactorwas filled with 1 atm. of helium, sealed and disconnected from themanifold and placed in a glove box. Inside the glove box, 20.7 (0.205mol) of diisopropylamine was added. Then, the reactor was taken out fromthe glove box and reconnected to the manifold and cooled down to −130°C. in a liquid nitrogen bath. 40 g of trisilane (0.433 mol) wastransferred to the reactor through the manifold. The reactor was thenheated up to 100° C. After stirring at 400 rpm for 23 hr, the reactorwas cooled down to RT (room temperature). Volatiles were cryotrapped ina SSLB (stainless steel lecture bottle). The reaction vessel pressuredropped to 20 Torr. The diisopropylaminotrisilane was recovered from thereactor vessel. The reaction solution contained 11.49 g of DIPATS. Thenon-isolated yield was 29%.

Monosubstituted and disubstituted heterocyclic aminotrisilanes can beprepared by the methods described herein. Equation 2 representsmonosubstituted heterocyclic aminosilanes and equation 3 representsdisubstituted hetrocyclic aminosilanes.

Si₃H₈+R^(A)NH=R^(A)NSi₃H₇+H₂  2.

Si₃H+2R^(A)NH═(R^(A)N)₂Si₃He+2H₂  3.

Where R^(A) is a cyclic secondary amine such as aziridine, azetidine,piperidine, pyrrolidine, pyrrole, imidazole, pyrazole and indole.Equations 2 and 3 above describe the reaction to form monosubstitutedand disubstituted heterocyclic trisilanes respectively. Monosubstitutedcompounds are shown in Table 1. Disubstituted trisilanes would have thesecond aminoheterocyclic group bonded to the third Si atom as in thedisubstituted examples in Table 1.

Disubstituted aminotrisilanes are formed as shown in equation 4.

R¹Si₃H₇+2R²R³NH═R²R³NSi₃H₆N R²R³+2H₂  4.

Where R¹=H and R²=H, linear or branched C₁ to C₆ alkyl, linear orbranched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyl and R³ isH, linear or branched C₁ to C₆ alkyl, linear or branched C₁ to C₈alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear orbranched C₁ to C₆ alkyl ether, silyl, trimethyl silyl, or linear orbranched C₁ to C₆ alkyl-substituted silyl. Non-limiting examples ofaminotrisilanes are shown in Table 1.

TABLE 1 Aminotrisilanes Monosubstituted Disubstituted Heterocyclic

R¹ Me Me R² H Me R¹ Me Me R² H Me

Me Me Me Et Pr Bu Me Me Me Et Pr Bu

Et Et Et H Pr Bu Et Et Et H Pr Bu

Pr Pr Pr H Pr Bu Pr Pr Pr H Pr Bu

Bu Bu ^(i)Pr H Bu H Bu Bu ^(i)Pr H Bu H

^(i)Pr ^(i)Pr ^(i)Pr Me Et Pr ^(i)Pr ^(i)Pr ^(i)Pr Me Et Pr

^(i)Pr ^(i)Pr ^(i)Pr ^(i)Pr ^(i)Pr Bu ^(i)Pr Bu Ph H Ph H

A solvent free method for the synthesis of chlorine freediisopropylaminosilane for example 6 comprises:

a) adding a catalyst to a reaction vessel;b) applying dynamic vacuum to the reaction vessel;c) heating the reaction vessel to activate the catalyst;d) maintaining vacuum and temperature of activation until the catalystis activated;e) cooling the reaction vessel to about room temperature;f) filling the reaction vessel with an inert gas to a pressure of aboutone atmosphere;g) adding diisopropylamine to the reaction vessel;h) cooling the reaction vessel to a temperature between about −78° C.and about −140° C.;i) adding trisilane to the reactor;j) heating the reactor to a temperature between about 75° C. to about200° C.;k) stirring the heated reaction mixture;l) monitoring the pressure in the reactor vessel until the pressurestops increasing;m) cooling the reactor to about room temperature;n) capturing volatiles in a cryotrap cooled to a temperature betweenabout −140° C. to about −196° C.;o) monitoring the pressure in the reactor vessel until the pressurestops decreasing; andp) recovering the diisopropylaminosilane from the reactor vessel.Steps b to e are omitted if the catalyst of step a) is activated or doesnot require activation.

Example 6. Synthesis of Diisopropylaminosilane(^(i)Pr)₂NSiH₃(^(i)Pr)₂NH+SiH₄=(^(i)Pr)₂NSiH₃+H₂

A method for synthesizing chlorine free diisopropylaminosilane (DIPAS)in a pressurized reactor from silane and diisopropylamine catalyzed bycommercially available Ruthenium on carbon would comprise. A 0.3 Lautoclave equipped with a mechanical stirrer, a thermocouple, a pressuregauge and a pressure transducer and 3 metering valves is charged with 6g (0.003 mmol of ruthenium) of 5% weight ruthenium on carbon catalyst.The reactor is then heated under dynamic vacuum at 125° C. for 3 hr.After cooling down to room temperature, the reactor is filled with 1atm. of helium, sealed and disconnected from the manifold and placed ina glove box. Inside the glove box, 20.7 (0.205 mol) of diisopropylamineis added. Then, the reactor is taken out from the glove box andreconnected to the manifold and it is cooled down to −130° C. in aliquid nitrogen bath. 20 g of trisilane (0.625 mol) are transferred tothe reactor through the manifold. The reactor is then heated up to 150°C. After stirring at 400 rpm for 23 hr, the reactor is cooled down toRT. Volatiles are cryotrapped in a SSLB. The reaction vessel pressurewill drop to about 45 Torr. The diisopropyoaminosilane is recovered fromthe reactor vessel.

A method for the synthesis of bis(diisopropylamino)disilane comprising:

a) adding an activated catalyst, diisopropylamine and disilane to areaction vessel;b) optionally adding a solvent to the reaction vessel;c) heating the reaction vessel to a temperature between about 25° C. toabout 300° C.;d) allowing the reaction to proceed;e) separating the non-reacted materials, by products and hydrogen fromthe bis(diisopropylamino)disilane; andf) recovering the bis(diisopropylamino)disilane.

A method for the synthesis of (R²R³N)_(m) SiR⁴ _(2-m)—SiR⁵ _(2-m)(NR²R³)wherein R²=H, linear or branched C₁ to C₆ alkyl, linear or branched C₁to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl,linear or branched C₁ to C₆ alkyl and R³=H, linear or branched C₁ to C₆alkyl, linear or branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆ alkyl and, R₄=H,linear or branched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl,linear or branched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branchedC₁ to C₈ alkyl and, R₅=H, linear or branched C₁ to C₆ alkyl, linear orbranched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl and m=0, 1 or 2 comprising:

a) adding an activated catalyst, R²R₃NH and HSiR⁴ _(2-m)—SiR⁵ _(2-m)H toa reaction vessel;b) optionally adding a solvent to the reaction vessel;c) heating the reaction vessel to a temperature between about 25° C. toabout 300° C.;d) allowing the reaction to proceed;e) separating the non-reacted materials, by products and hydrogen fromthe product, andf) recovering the product.

A method for the synthesis of compounds having germanium-heteroatombonds without the formation of halogen salt by products has beendeveloped. Reactants such as germane and phosphine are combined in thepresence of an activated catalyst and heat to produce halogen freetrigermanephosphine. The general reaction is given in the followingequation:

PH₃+3GeH₄═P(GeH₃)₃+3H₂

The reaction may be carried out in a solvent or without a solvent.

Example 8 Synthesis of Trisilylphosphine

PH₃+3GeH₄═P(GeH₃)₃+3H₂

A method for the synthesis of trigermanephosphine comprising:

a) adding an activated catalyst, phosphine and germane to a reactionvessel;b) optionally adding a solvent to the reaction vessel;c) maintaining the reaction vessel to a temperature between about 25° C.to about 300° C.;d) allowing the reaction to proceed;e) separating the non-reacted materials, by products and hydrogen fromthe trigermanephosphine; andf) recovering the trigermanephosphine.

A method for the synthesis of diisopropyoaminogermane comprising:

a) adding an activated catalyst, isopropylamine and germane to areaction vessel;b) optionally adding a solvent to the reaction vessel;c) maintaining the reaction vessel to a temperature between about 25° C.to about 300° C.;d) allowing the reaction to proceed;e) separating the non-reacted materials, by products and hydrogen fromthe diisopropyoaminogermane; andf) recovering the diisopropyoaminogermane.

SILYLAMIDINATES

A method for preparing the compound having the formula:

where n=1 to 5; R¹, R² and R³ are independently selected from the groupconsisting of linear or branched C₁ to C₆ alkyl, linear or branched C₁to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl,linear or branched C₁ to C₆ alkyl ether, silyl, trimethyl silyl, orlinear or branched C₁ to C₆ alkyl-substituted silyla) contacting the reactants R¹HN(CR³)═NR² (amidine) andSiH₃Si_(n)H_(2n+1), in the presence of a transition metal catalystforming a reaction mixture; where the molar ratio of SiH₃Si_(n)H_(2n+1)to R¹HN(CR³)═NR² is at least 1:1;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form[(R¹N(CR³)═NR²)(SiH₂Si_(n)H_(2n+1))];e) separating the product [(R¹N(CR³)═NR²)(SiH₂Si_(n)H_(2n+1))] from thereaction mixture; wherein the reaction temperature may vary during thesynthesis and is maintained such that the temperature of the reactionmixture is not allowed to drop below about 0° C. and not exceed about300° C.

Example 7

The solvent free synthesis of chlorine and aminochlorine freeN,N′-bis(isopropyl)ethanimidamidatodisilane in a pressurized reactorfrom disilane and N,N′-bis(isopropyl)ethanimidamide catalyzed bycommercially available Ruthenium on carbon. A 0.3 L autoclave equippedwith a mechanical stirrer, a thermocouple, a pressure gauge and apressure transducer and 3 metering valves is charged with 6 g (0.003mmol of ruthenium) of 5% weight ruthenium on carbon catalyst. Thereactor is then heated under dynamic vacuum at 125° C. for 3 hr. Aftercooling down to room temperature, the reactor is filled with 1 atm. ofhelium, sealed and disconnected from the manifold. Inside a glove box,29.1 g (0.205 mol) of N,N′-bis(isopropyl)ethanimidamide are added. Then,the reactor is taken out from the glove box and reconnected to themanifold and it is cooled down to −130° C. in a liquid nitrogen bath. 30g of disilane (0.453 mol) are transferred to the reactor through themanifold. The reactor is then heated up to 100-150° C. The reactionmixture is stirred at about 400 rpm for about 2-24 hr, pressureincreases to about 100 psi. Then, the reactor is cooled to RT. Volatilesare cryotrapped in a SSLB. The reaction vessel pressure drops to about45 Torr. The N,N′-bis(isopropyl)ethanimidamidatosilane is recovered fromthe reactor vessel.

A method for preparing the compound having the formula:

where n=0 to 4; R¹, R², R³, R⁴, R⁵, R⁶ are independently selected fromthe group consisting of linear or branched C₁ to C₆ alkyl, linear orbranched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ toC₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethylsilyl, or linear or branched C₁ to C₆ alkyl-substituted silyla) contacting the reactants R¹HN(CR³)═NR² (amidine) andSiH₃Si_(n)H_(2n)SiH₃, in the presence of a transition metal catalystforming a reaction mixtureb) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form[(R¹N(CR³)═NR²)(SiH₂Si_(n)H_(2n)SiH₃)];e) adding R⁴HN(CR⁶)═NR⁵ to the reaction mixturef) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;g) allowing the reaction to proceed to form[(R¹N(CR³)═NR²)(R⁴N(CR⁶)═NR)═NR⁵)(SiH₂Si_(n)H_(2n)SiH₂)];h) separating the product[(R¹N(CR³)═NR²)(R⁴N(CR⁶)═NR⁵)(SiH₂Si_(n)H_(2n)SiH₂)] from the reactionmixture;wherein the reaction temperature may vary during the synthesis and ismaintained such that the temperature of the reaction mixture is notallowed to drop below about 0° C. and not exceed about 300° C.

If R¹HN(CR³)═NR² is the same as R⁴HN(CR⁶)═NR⁵, the product will be[(R¹N(CR³)═NR²)₂(SiH₂Si_(n)H_(2n)SiH₂)].

The order of addition of the amidines may vary depending on the natureof the groups R₁, R₂, R₃, R₄, R₅ and R₆. The addition of the secondamidine can be performed separately, therefore the silylamidinate[(R¹N(CR³)═NR²)(SiH₂Si_(n)H_(2n)SiH₃)] can be isolated and/or purifiedand subsequently contacted with R⁴HN(CR⁶)═NR⁵ in the presence of atransition metal catalyst to form[(R¹N(CR³)═NR²)(R⁴N(CR⁶)═NR)(SiH₂Si_(n)H_(2n)SiH₂)].

Sequential amine addition for the synthesis of aminosilanes with twodifferent amines having the formula

comprising:a) contacting the reactants R¹R²NH and E_(k)H_((2k+1)) in the presenceof a transition metal catalyst forming a reaction mixture;b) optionally adding a solvent to the reaction mixture;c) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;d) allowing the reaction to proceed to form(R¹R²N)_(n1)E_(k)H_((2(k+1)−n1));e) adding R³R⁴NH to the reaction mixture;f) maintaining the reaction mixture at a temperature between about 0° C.to about 300° C.;g) allowing the reaction to proceed to form (R¹R²N)_(n1) (R³R⁴N)_(n2)E_(k)H_((2(k+1)−n1−n2));h) separating the (R¹R²N)_(n1) (R³R⁴N)_(n2) E_(k)H_((2k+1)−n1−n2)) fromthe reaction mixture; wherein the reaction mixture temperature may varyduring the synthesis and is maintained such that the temperature of thereaction mixture is not allowed to drop below about 0° C. and not exceedabout 300° C.

The order of addition of the amines may vary depending on the nature ofthe groups R₁, R₂, R₃ and R₄. The addition of the second amine can beperformed separately, therefore the aminosilane(R¹R²N)_(n1)E_(k)H_((2(k+1)−n1)) can be isolated and/or purified andsubsequently contacted with R³R⁴NH in the presence of a transition metalcatalyst to form (R¹R²N)_(n1)(R³R⁴N)_(n2)E_(k)H_((2(k+1)−n1−n2))

Example 9. Diisopropylaminodiethylaminodisilane Synthesis

Diisopropylaminodiethylaminodisilane is synthesized in a pressurizedreactor vessel by the reaction between disilane, diisopropylamine anddiethylamine catalyzed by commercially available Ruthenium on carbon: A0.3 L autoclave (reaction vessel) equipped with a mechanical stirrer, athermocouple, a pressure gauge and a pressure transducer and 3 meteringvalves, as illustrated in FIG. 1, is charged with 6 g (0.003 mmol ofruthenium) of 5% weight ruthenium on carbon catalyst. The reactor isthen heated under dynamic vacuum at 125° C. for 3 hr. activating thecatalyst. After cooling to room temperature, the reactor is filled withhelium at 1 atmosphere (“atm”) pressure, sealed and disconnected fromthe manifold. Inside a glove box, 20.7 g (0.205 mol) of diisopropylamineis added to the reactor. The reactor is taken out from the glove box andreconnected to the manifold and it is cooled to −130° C. in a liquidnitrogen bath. 30 g (0.453 mol) of disilane are transferred to thereactor through the manifold. The reactor is heated to about 150° C. Thereactor contents is stirred at about 400 rpm for about 5 hr, pressure inthe reactor increases about 160 psi. The reactor is cooled to RT.Volatiles are cryotrapped in a stainless steel lecture bottle (“SSLB”).The reaction vessel pressure drops to about 45 Torr. The reactor is putback in the glove box and is opened. 15.0 g (0.205 mol) of diethylamineare added to the mixture. They reactor is then heated to temperaturesvarying from about 30° C. to about 150° C. The reactor is stirred atabout 400 rpm for about 2-24 hr. the pressure increases to about 160psi. Volatiles are cryotrapped in a stainless steel lecture bottle(“SSLB”). The reaction vessel pressure drops to about 25-45 Torr. Thediisopropylaminodiethylamino-disilane is recovered from the reactionvessel.

The order of addition of amines may be reversed.

The aminosilanes of the present invention are used as precursors forvapor deposition methods. Disclosed herein are methods of using thedisclosed precursors for vapor deposition methods. The disclosed methodsprovide for the use of the precursors for deposition ofsilicon-containing films. The disclosed methods may be useful in themanufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel typedevices. The method includes: introducing the vapor of the disclosedprecursors into a reactor having at least one substrate disposedtherein: and using a vapor deposition process to deposit at least partof the disclosed precursor onto the substrate to form a Si-containinglayer.

The disclosed methods also provide for forming a bimetal containinglayer on a substrate using a vapor deposition process and, moreparticularly, for deposition of SiMN_(x) and SiMO_(x) films wherein x is0-4, and SiMO_(x)N_(y) films, wherein x+y is 0 to 4 and M is a metalfrom the group Ta, Hf, Zr, Ti, Ni, Mn, Ge, B, Nb, Mg, Al, Sr, Y, Ba, Ca,As, Sb, Bi, Sn, Pb, Co, lanthanides (such as Er), or combinationsthereof. The general SiMO_(x), SiMO_(x) or SiMO_(x)N_(y) terminologycovers various relative concentrations of Si and M in the range ofSi/(Si+M) is about 5% to about 95%.

The disclosed methods of forming silicon-containing layers on substratesmay be useful in the manufacture of semiconductor, photovoltaic,LCD-TFT, or flat panel type devices. The disclosed precursors maydeposit Si-containing films using any vapor deposition methods known inthe art. Examples of suitable vapor deposition methods include chemicalvapor deposition (CVD) or atomic layer deposition (ALD). Exemplary CVDmethods include thermal CVD, plasma enhanced CVD (PECVD), pulsed CVD(PCVD), low pressure CVD (LPCVD), sub-atmospheric CVD (SACVD) oratmospheric pressure CVD (APCVD), hot-wire CVD (HWCVD, also known ascat-CVD, in which a hot wire serves as an energy source for thedeposition process, remote plasma CVD (RP-CVD) UV assisted CVD, flowableCVD (FCVD)), radicals incorporated CVD, and combinations thereof.Exemplary ALD methods include thermal ALD, plasma enhanced ALD (PEALD),spatial isolation ALD, hot-wire ALD (HWALD), radicals incorporated ALD,UV assisted ALD and combinations thereof. Super critical fluiddeposition may also be used. The disclosed methods may also be used inthe flowable PECVD deposition processes described in U.S. Pat. App. Pub.No. 2014/0051264 to Applied Materials, Inc., the contents of which isincorporated herein in its entirety. The deposition method is preferablyALD, spatial ALD, PE-ALD or flowable CVD (F-CVD).

The vapor of the precursor is introduced into a reaction chambercontaining at least one substrate. The temperature and the pressurewithin the reaction chamber and the temperature of the substrate areheld at conditions suitable for vapor deposition of at least part of theprecursor onto the substrate. In other words, after introduction of thevaporized precursor into the chamber, conditions within the chamber aresuch that at least part of the vaporized precursor is deposited onto thesubstrate to form the silicon-containing film. A co-reactant may also beused to help in formation of the Si-containing layer. The co-reactantmay be introduced simultaneously or separately sequentially from theprecursors and is selected from O₂, O₃, O radicals and ions, NO, N₂O,H₂O, H₂O₂, CO₂, CO, carboxylic acid, formalin, alcohols, diols, NH₃,hydrazines (substituted or not, such as UDMH, terbutylhydrazine), amines(such as DMA, TMA, DEA, TEA, TB, NH₂), diamines, N radicals and ions, H₂and mixtures thereof.

The reaction chamber may be any enclosure or chamber of a device inwhich deposition methods take place, such as, without limitation, aparallel-plate type reactor, a cold-wall type reactor, a hot-wall typereactor, a single-wafer reactor, a multi-wafer reactor, or other suchtypes of deposition systems such as spatial ALD chambers, roll to rollALD chambers. All of these exemplary reaction chambers are capable ofserving as an ALD reaction chamber. The reaction chamber may bemaintained at a pressure ranging from about 1 mTorr to about 760 Torr.In addition, the temperature within the reaction chamber may range fromabout 20° C. to about 600° C. One of ordinary skill in the art willrecognize that the temperature may be optimized through mereexperimentation to achieve the desired result.

The temperature of the reactor may be controlled by either controllingthe temperature of the substrate holder, controlling the temperature ofthe reactor wall, or controlling the temperature of the substrateitself. Devices used to heat the substrate are known in the art. Thereactor wall is heated to a sufficient temperature to obtain the desiredfilm at a sufficient growth rate and with desired physical state andcomposition. A non-limiting exemplary temperature range to which thereactor wall may be heated includes from approximately 20° C. toapproximately 600° C. When a plasma deposition process is utilized, thedeposition temperature may range from approximately 20° C. toapproximately 550° C. Alternatively, when a thermal process isperformed, the deposition temperature may range from approximately 200°C. to approximately 600° C.

Alternatively, the substrate may be heated to a sufficient temperatureto obtain the desired silicon-containing film at a sufficient growthrate and with desired physical state and composition. A non-limitingexemplary temperature range to which the substrate may be heatedincludes from 150° C. to 600° C. Preferably, the temperature of thesubstrate remains less than or equal to 500° C.

The type of substrate upon which the silicon-containing film will bedeposited will vary depending on the final use intended. A substrate isgenerally defined as the material on which a process is conducted. Thesubstrates may be any suitable substrate used in semiconductor,photovoltaic, flat panel, or LCD-TFT device manufacturing. Examples ofsuitable substrates include wafers, such as silicon, silica, glass, Ge,or GaAs wafers. The wafer may have one or more layers of differingmaterials deposited on it from a previous manufacturing step. Forexample, the wafers may include silicon layers (crystalline, amorphous,porous, etc.), silicon oxide layers, silicon nitride layers, silicon oxynitride layers, carbon doped silicon oxide (SiCOH) layers, porous carbondoped silicon oxide layers, silicon carbo-nitride, hydrogeneratedsilicon carbide, or combinations thereof. Additionally, the wafers mayinclude copper layers, tungsten layers or metal layers (for exampleplatinum, palladium, nickel, rhodium, gold, Cobalt, germanium, antimony,tellurium, tin, ruthenium and their alloys). The wafers may includebarrier layers, such as manganese, manganese oxide, nitrides of Ta, W,Ti, V, Zr, Hg, Nb, Mo, Mn and Ru. Nitride may be C-doped nitride.Plastic layers, such as poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) [PEDOT:PSS] may also be used. The film may bedeposited over an organic film, such as a photoresist layer, anamorphous carbon layer, or a polyimide film. The layers may be planar orpatterned. In some embodiments, the substrate may include layers ofoxides which are used as dielectric materials in MIM, DRAM, RERAM, phasechange RAM, or FeRam technologies (for example, Zr, Hg, Ti, Nb, Mo, Al,Ta, lanthanides, rare earths and mixed ternary or binaryoxides thereof)or from nitride-based films (for example, TaN) that are used as anadhesion barrier between copper and the low-k layer. The disclosedprocesses may deposit the silicon-containing layer directly on the waferor directly on one or more than one (when patterned layers form thesubstrate) of the layers on top of the wafer. Furthermore, one ofordinary skill in the art will recognize that the terms “film” or“layer” used herein refer to a thickness of some material laid on orspread over a surface and that the surface may have 3D patterns ormicrostructures such as holes and trenches or a line. The deposition maybe selective to specific areas on the substrate, or selective to certainexposed materials. For example, the growth may be inhibited on certainparts of the substrate covered with self aligned monolayers (“SAM”).Throughout the specification and claims, the wafer and any associatedlayers thereon are referred to as substrates.

The disclosed precursors may be supplied either in neat form or in ablend with a suitable solvent, such as toluene, ethyl benzene, xylene,mesitylene, decane, dodecane, octane, hexane, pentane, tertiary amines,tetrahydrofuran, ethylmethylketone, decalin, or others. The disclosedprecursors may be present in varying concentrations in the solvent. Forexample, the resulting concentration may range from approximately 0.05 Mto approximately 2 M.

The neat or blended precursors are introduced into a reactor in vaporform by conventional means, such as tubing and/or flow meters. Theprecursor in vapor form may be produced by vaporizing the neat orblended precursor solution through a conventional vaporization step suchas, bubbling, vapor draw or by using a sublimator such as the onedisclosed in PCT Publication WO2009/087609 to Xu et al. The neat orblended precursor may be fed in liquid state to a vaporizer where it isvaporized before it is introduced into the reactor (direct liquidinjection). When present, the carrier gas may include, but is notlimited to, Ar, He, N₂, or H₂ and mixtures thereof. The carrier gas andprecursor are then introduced into the reactor as a vapor.

If necessary, the container may be heated to a temperature that permitsthe precursor to be in its liquid or solid phase and to have asufficient vapor pressure. The container may be maintained attemperatures in the range of, for example, 0-150° C. Those skilled inthe art recognize that the temperature of the container may be adjustedin a known manner to control the vapor pressure of the precursorvaporized and the concentration in the process chamber.

The film obtained by a vapor deposition method can be further treated byvarious methods such as annealing, reactive annealing, UV curing, e-beamcuring and radical annealing. The film composition and structure can besignificantly affected by this step.

It will be understood that many additional changes in the details,materials, steps, and arrangement of parts, which have been hereindescribed and illustrated in order to explain the nature of theinvention, may be made by those skilled in the art within the principleand scope of the invention as expressed in the appended claims. Thus,the present invention is not intended to be limited to the specificembodiments in the examples given above and/or the attached drawings.

Although the description above contains much specificity, these shouldnot be construed as limiting the scope of the invention but as merelyproviding illustrations of some of the presently preferred embodimentsof this invention. Various other embodiments and ramifications arepossible within its scope. It will be understood that many additionalchanges in the details, materials, steps, and arrangement of parts,which have been herein described and illustrated in order to explain thenature of the invention, may be made by those skilled in the art withinthe principle and scope of the invention as expressed in the appendedclaims.

We claim:
 1. A halogen free compound having the formula comprising:

where E=Si; n₁=1 or 2; n₂=0; k=3; R¹ and R² are independently selected from the group consisting of H, linear or branched C₁ to C₆ alkyl, linear or branched C₁ to C₈ alkenyl, linear or branched C₁ to C₈ alkynyl, C₆ to C₁₀ aryl, linear or branched C₁ to C₆ alkyl ether, silyl, trimethyl silyl, or linear or branched C₁ to C₆ alkyl-substituted silyl; and the detectable amount of halogen is less than 5 ppm.
 2. The halogen free compound of claim 1, wherein R¹ is Me, Et, Pr, or Bu.
 3. The halogen free compound of claim 2, wherein R² is H.
 4. The halogen free compound of claim 2, wherein R² is Me.
 5. The halogen free compound of claim 2, wherein R² is Et.
 6. The halogen free compound of claim 2, wherein R² is Pr.
 7. The halogen free compound of claim 2, wherein R² is Bu.
 8. The halogen free compound of claim 7, wherein R¹ and R² are both tBu.
 9. The halogen free compound of claim 1, wherein the NR¹R² group is selected from the group consisting of aziridine, azetidine, piperidine, pyrrolidine, pyrrole, imidazole, pyrazole, indole, and any C-substituted derivatives thereof. 